Behavior of nanocomposite consisting of manganese ferrite particles and atomic layer deposited bismuth oxide chloride film
نویسندگان
چکیده
منابع مشابه
Atomic layer deposited zinc tin oxide channel for amorphous oxide thin film transistors
Bottom-gate thin film transistors with amorphous zinc tin oxide channels were grown by atomic layer deposition. The films maintained their amorphous character up to temperatures over 500 C. The highest field effect mobility was 13 cm/V s with on-to-off ratios of drain current 10–10. The lowest subthreshold swing of 0.27 V/decade was observed with thermal oxide as a gate insulator. The channel l...
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ژورنال
عنوان ژورنال: Journal of Magnetism and Magnetic Materials
سال: 2020
ISSN: 0304-8853
DOI: 10.1016/j.jmmm.2019.166167